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First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

Fuente: arXiv

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Bibliographic Details
Main Authors:	Park, Seohyeon, Yoo, Jaewook, Song, Hyeojun, Lee, Hongseung, Lim, Seongbin, Kim, Soyeon, Park, Minah, Kim, Bongjoong, Heo, Keun, Ye, Peide D., Bae, Hagyoul
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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