Using Light to Polarize and Detect Electron Spins in Silicon
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866911969064255488 |
|---|---|
| author | Marie, Xavier Lagarde, Delphine Balocchi, Andrea Robert, Cedric Lombez, Laurent Renucci, Pierre Amand, Thierry Cadiz, Fabian |
| author_facet | Marie, Xavier Lagarde, Delphine Balocchi, Andrea Robert, Cedric Lombez, Laurent Renucci, Pierre Amand, Thierry Cadiz, Fabian |
| contents | Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of luminescence following circularly polarized light excitation. The experiments performed for both direct and indirect gap excitation allow not only an experimental determination of the optical selection rules in silicon for the different phononassisted transitions but they also lead to the measurement of the spin relaxation of electrons in conditions which are not accessible using transport techniques. We also measure the spin properties of free excitons in bulk silicon, a very little explored field. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_18742 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Using Light to Polarize and Detect Electron Spins in Silicon Marie, Xavier Lagarde, Delphine Balocchi, Andrea Robert, Cedric Lombez, Laurent Renucci, Pierre Amand, Thierry Cadiz, Fabian Materials Science Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin properties in bulk silicon by measuring the polarization of luminescence following circularly polarized light excitation. The experiments performed for both direct and indirect gap excitation allow not only an experimental determination of the optical selection rules in silicon for the different phononassisted transitions but they also lead to the measurement of the spin relaxation of electrons in conditions which are not accessible using transport techniques. We also measure the spin properties of free excitons in bulk silicon, a very little explored field. |
| title | Using Light to Polarize and Detect Electron Spins in Silicon |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.18742 |