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Main Authors: Graziosi, Patrizio, Della Valle, Raffaele Guido, Salzillo, Tommaso, d'Agostino, Simone, Zangari, Martina, Cane', Elisabetta, Masino, Matteo, Venuti, Elisabetta
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2407.18824
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author Graziosi, Patrizio
Della Valle, Raffaele Guido
Salzillo, Tommaso
d'Agostino, Simone
Zangari, Martina
Cane', Elisabetta
Masino, Matteo
Venuti, Elisabetta
author_facet Graziosi, Patrizio
Della Valle, Raffaele Guido
Salzillo, Tommaso
d'Agostino, Simone
Zangari, Martina
Cane', Elisabetta
Masino, Matteo
Venuti, Elisabetta
contents We have developed a first-principles method to calculate the electron-phonon coupling for specific modes and q-points in the Brillouin Zone for crystalline organic semiconductors. Using the obtained coupling strengths, we propose an approach to compute the temperature-dependent mobilities of electrons and holes. This methodology is applied to both bulk and thin-film polymorphs of tetracene. To validate our treatment of the electronic structures and vibrational properties, we calculate the Raman spectra in the lattice-phonon region and compare them with experimental data. We then compare the computed mobilities with available data for single crystals, finding good agreement within the experimental range, especially when accounting for possible charged impurities. Finally, we discuss the observed differences between the polymorphs.
format Preprint
id arxiv_https___arxiv_org_abs_2407_18824
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Electron-phonon coupling and mobility modeling in organic semiconductors: method and application to tetracene polymorphs
Graziosi, Patrizio
Della Valle, Raffaele Guido
Salzillo, Tommaso
d'Agostino, Simone
Zangari, Martina
Cane', Elisabetta
Masino, Matteo
Venuti, Elisabetta
Materials Science
We have developed a first-principles method to calculate the electron-phonon coupling for specific modes and q-points in the Brillouin Zone for crystalline organic semiconductors. Using the obtained coupling strengths, we propose an approach to compute the temperature-dependent mobilities of electrons and holes. This methodology is applied to both bulk and thin-film polymorphs of tetracene. To validate our treatment of the electronic structures and vibrational properties, we calculate the Raman spectra in the lattice-phonon region and compare them with experimental data. We then compare the computed mobilities with available data for single crystals, finding good agreement within the experimental range, especially when accounting for possible charged impurities. Finally, we discuss the observed differences between the polymorphs.
title Electron-phonon coupling and mobility modeling in organic semiconductors: method and application to tetracene polymorphs
topic Materials Science
url https://arxiv.org/abs/2407.18824