Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866917735383957504 |
|---|---|
| author | Lee, Hyobeom Im, Hayoon Choi, Byoung Ki Park, Kyoungree Chen, Yi Ruan, Wei Zhong, Yong Lee, Ji-Eun Ryu, Hyejin Crommie, Michael F. Shen, Zhi-Xun Hwang, Choongyu Mo, Sung-Kwan Hwang, Jinwoong |
| author_facet | Lee, Hyobeom Im, Hayoon Choi, Byoung Ki Park, Kyoungree Chen, Yi Ruan, Wei Zhong, Yong Lee, Ji-Eun Ryu, Hyejin Crommie, Michael F. Shen, Zhi-Xun Hwang, Choongyu Mo, Sung-Kwan Hwang, Jinwoong |
| contents | Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_19207 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene Lee, Hyobeom Im, Hayoon Choi, Byoung Ki Park, Kyoungree Chen, Yi Ruan, Wei Zhong, Yong Lee, Ji-Eun Ryu, Hyejin Crommie, Michael F. Shen, Zhi-Xun Hwang, Choongyu Mo, Sung-Kwan Hwang, Jinwoong Materials Science Tunability of interfacial effects between two-dimensional (2D) crystals is crucial not only for understanding the intrinsic properties of each system, but also for designing electronic devices based on ultra-thin heterostructures. A prerequisite of such heterostructure engineering is the availability of 2D crystals with different degrees of interfacial interactions. In this work, we report a controlled epitaxial growth of monolayer TaSe2 with different structural phases, 1H and 1T, on a bilayer graphene (BLG) substrate using molecular beam epitaxy, and its impact on the electronic properties of the heterostructures using angle-resolved photoemission spectroscopy. 1H-TaSe2 exhibits significant charge transfer and band hybridization at the interface, whereas 1T-TaSe2 shows weak interactions with the substrate. The distinct interfacial interactions are attributed to the dual effects from the differences of the work functions as well as the relative interlayer distance between TaSe2 films and BLG substrate. The method demonstrated here provides a viable route towards interface engineering in a variety of transition-metal dichalcogenides that can be applied to future nano-devices with designed electronic properties. |
| title | Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.19207 |