Strain engineering in Ge/GeSi spin qubits heterostructures
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866916629543124992 |
|---|---|
| author | Mauro, Lorenzo Rodríguez-Mena, Esteban A. Martinez, Biel Niquet, Yann-Michel |
| author_facet | Mauro, Lorenzo Rodríguez-Mena, Esteban A. Martinez, Biel Niquet, Yann-Michel |
| contents | The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_19854 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Strain engineering in Ge/GeSi spin qubits heterostructures Mauro, Lorenzo Rodríguez-Mena, Esteban A. Martinez, Biel Niquet, Yann-Michel Mesoscale and Nanoscale Physics The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are extremely sharp and call for a careful alignment of the magnetic field in Ge spin qubit devices. We investigate how the $g$-factors can be engineered by strains. We show that uniaxial strains can raise in-plane $g$-factors above unity while leaving $g_z^*$ essentially constant. We discuss how the etching of an elongated mesa in a strained buffer can actually induce uniaxial (but inhomogeneous) strains in the heterostructure. This broadens the operational magnetic field range and enables spin manipulation by shuttling holes between neighboring dots with different $g$-factors. |
| title | Strain engineering in Ge/GeSi spin qubits heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2407.19854 |