Quantum efficiency and vertical position of quantum emitters in hBN determined by Purcell effect in hybrid metal-dielectric planar photonic structures

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Gérard, Domitille, Pierret, Aurélie, Fartas, Helmi, Bérini, Bruno, Buil, Stéphanie, Hermier, Jean-Pierre, Delteil, Aymeric
Format: Preprint
Published: 2024
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866915124815593472
author Gérard, Domitille
Pierret, Aurélie
Fartas, Helmi
Bérini, Bruno
Buil, Stéphanie
Hermier, Jean-Pierre
Delteil, Aymeric
author_facet Gérard, Domitille
Pierret, Aurélie
Fartas, Helmi
Bérini, Bruno
Buil, Stéphanie
Hermier, Jean-Pierre
Delteil, Aymeric
contents Color centers in hexagonal boron nitride (hBN) advantageously combine excellent photophysical properties with a potential for integration in highly compact devices. Progress towards scalable integration necessitates a high quantum efficiency and an efficient photon collection. In this context, we compare the optical characteristics of individual hBN color centers generated by electron irradiation, in two different electromagnetic environments. We keep track of well-identified emitters that we characterize before and after dry transfer of exfoliated crystals. This comparison provides information about their quantum efficiency - which we find close to unity - as well as their vertical position in the crystal with nanometric precision, which we find away from the flake surfaces. Our work suggests hybrid dielectric-metal planar structures as an efficient tool for characterizing quantum emitters in addition to improving the count rate, and can be generalized to other emitters in 2D materials or in planar photonic structures.
format Preprint
id arxiv_https___arxiv_org_abs_2407_20160
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Quantum efficiency and vertical position of quantum emitters in hBN determined by Purcell effect in hybrid metal-dielectric planar photonic structures
Gérard, Domitille
Pierret, Aurélie
Fartas, Helmi
Bérini, Bruno
Buil, Stéphanie
Hermier, Jean-Pierre
Delteil, Aymeric
Optics
Quantum Physics
Color centers in hexagonal boron nitride (hBN) advantageously combine excellent photophysical properties with a potential for integration in highly compact devices. Progress towards scalable integration necessitates a high quantum efficiency and an efficient photon collection. In this context, we compare the optical characteristics of individual hBN color centers generated by electron irradiation, in two different electromagnetic environments. We keep track of well-identified emitters that we characterize before and after dry transfer of exfoliated crystals. This comparison provides information about their quantum efficiency - which we find close to unity - as well as their vertical position in the crystal with nanometric precision, which we find away from the flake surfaces. Our work suggests hybrid dielectric-metal planar structures as an efficient tool for characterizing quantum emitters in addition to improving the count rate, and can be generalized to other emitters in 2D materials or in planar photonic structures.
title Quantum efficiency and vertical position of quantum emitters in hBN determined by Purcell effect in hybrid metal-dielectric planar photonic structures
topic Optics
Quantum Physics
url https://arxiv.org/abs/2407.20160