Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory

Fuente: arXiv

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Bibliographic Details
Main Authors:	Morshed, Md Golam, Vakili, Hamed, Sakib, Mohammad Nazmus, Ganguly, Samiran, Stan, Mircea R., Ghosh, Avik W.
Format:	Preprint
Published:	2024
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2407.20925