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Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Morshed, Md Golam, Vakili, Hamed, Sakib, Mohammad Nazmus, Ganguly, Samiran, Stan, Mircea R., Ghosh, Avik W.
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Mesoscale and Nanoscale Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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