Characterization of the RD50-MPW4 HV-CMOS pixel sensor

Fuente: arXiv

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Bibliographische Detailangaben
Hauptverfasser:	Pilsl, B., Bergauer, T., Casanova, R., Handerkas, H., Irmler, C., Kraemer, U., Marco-Hernandez, R., de Cos, J. Mazorra, Palomo, F. R., Powell, S., Sieberer, P., Sonneveld, J., Steininger, H., Vilella, E., Wade, B., Zhang, C., Zhang, S.
Format:	Preprint
Veröffentlicht:	2024
Schlagworte:	Instrumentation and Detectors High Energy Physics - Experiment
Online-Zugang:	Acceder al recurso
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_version_	1866913501195272192
author	Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S.
author_facet	Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S.
contents	The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.
format	Preprint
id	arxiv_https___arxiv_org_abs_2407_21378
institution	arXiv
publishDate	2024
record_format	arxiv
spellingShingle	Characterization of the RD50-MPW4 HV-CMOS pixel sensor Pilsl, B. Bergauer, T. Casanova, R. Handerkas, H. Irmler, C. Kraemer, U. Marco-Hernandez, R. de Cos, J. Mazorra Palomo, F. R. Powell, S. Sieberer, P. Sonneveld, J. Steininger, H. Vilella, E. Wade, B. Zhang, C. Zhang, S. Instrumentation and Detectors High Energy Physics - Experiment The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.
title	Characterization of the RD50-MPW4 HV-CMOS pixel sensor
topic	Instrumentation and Detectors High Energy Physics - Experiment
url	https://arxiv.org/abs/2407.21378