Hybrid electroluminescence device for on-demand single photon generation at room temperature

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Hauptverfasser: Rodek, Aleksander, Hajdel, Mateusz, Oreszczuk, Kacper, Kafar, Anna, Aktas, Muhammed, Marona, Lucja, Potemski, Marek, Skierbiszewski, Czeslaw, Kossacki, Piotr
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Veröffentlicht: 2024
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author Rodek, Aleksander
Hajdel, Mateusz
Oreszczuk, Kacper
Kafar, Anna
Aktas, Muhammed
Marona, Lucja
Potemski, Marek
Skierbiszewski, Czeslaw
Kossacki, Piotr
author_facet Rodek, Aleksander
Hajdel, Mateusz
Oreszczuk, Kacper
Kafar, Anna
Aktas, Muhammed
Marona, Lucja
Potemski, Marek
Skierbiszewski, Czeslaw
Kossacki, Piotr
contents Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structure of the host crystal. This work presents compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are used for bottom-to-top excitation of hBN nanoflakes deposited on the laser facets. Our approach circumvents the issue of electroluminescence generation from hBN and provides access to the SPE's signal without optical driving by an external laser. Using laser diodes upgraded with Bragg reflectors a room-temperature generation of single photons from hBN is confirmed by an 80%-dip in their g(2) second-order correlation. The on-demand emission of single photons at room temperature is demonstrated by driving the laser diodes in pulsed operation, with confidence supported by a measured g(2)(0) value of 0.37.
format Preprint
id arxiv_https___arxiv_org_abs_2408_00719
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Hybrid electroluminescence device for on-demand single photon generation at room temperature
Rodek, Aleksander
Hajdel, Mateusz
Oreszczuk, Kacper
Kafar, Anna
Aktas, Muhammed
Marona, Lucja
Potemski, Marek
Skierbiszewski, Czeslaw
Kossacki, Piotr
Optics
Applied Physics
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structure of the host crystal. This work presents compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are used for bottom-to-top excitation of hBN nanoflakes deposited on the laser facets. Our approach circumvents the issue of electroluminescence generation from hBN and provides access to the SPE's signal without optical driving by an external laser. Using laser diodes upgraded with Bragg reflectors a room-temperature generation of single photons from hBN is confirmed by an 80%-dip in their g(2) second-order correlation. The on-demand emission of single photons at room temperature is demonstrated by driving the laser diodes in pulsed operation, with confidence supported by a measured g(2)(0) value of 0.37.
title Hybrid electroluminescence device for on-demand single photon generation at room temperature
topic Optics
Applied Physics
url https://arxiv.org/abs/2408.00719