Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

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Hauptverfasser: Mann, Matthew, Nakamura, James, Liang, Shuang, Maiti, Tanmay, Diaz, Rosa, Manfra, Michael J.
Format: Preprint
Veröffentlicht: 2024
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author Mann, Matthew
Nakamura, James
Liang, Shuang
Maiti, Tanmay
Diaz, Rosa
Manfra, Michael J.
author_facet Mann, Matthew
Nakamura, James
Liang, Shuang
Maiti, Tanmay
Diaz, Rosa
Manfra, Michael J.
contents We report on fabrication and performance of submicron Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low temperature electrical measurements we investigate the relationship between contact performance and the mechanical and chemical properties of the annealed metal stack. Contact geometry and crystallographic orientation significantly impact performance. Our results indicate that the spatial distribution of germanium in the annealed contact plays a central role in the creation of high transmission contacts. We characterize the transmission of our contacts at high magnetic fields in the quantum Hall regime. Our work establishes that contacts with area 0.5 square microns and resistance less than 400 Ohms can be fabricated with high yield.
format Preprint
id arxiv_https___arxiv_org_abs_2408_00890
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Mann, Matthew
Nakamura, James
Liang, Shuang
Maiti, Tanmay
Diaz, Rosa
Manfra, Michael J.
Mesoscale and Nanoscale Physics
We report on fabrication and performance of submicron Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low temperature electrical measurements we investigate the relationship between contact performance and the mechanical and chemical properties of the annealed metal stack. Contact geometry and crystallographic orientation significantly impact performance. Our results indicate that the spatial distribution of germanium in the annealed contact plays a central role in the creation of high transmission contacts. We characterize the transmission of our contacts at high magnetic fields in the quantum Hall regime. Our work establishes that contacts with area 0.5 square microns and resistance less than 400 Ohms can be fabricated with high yield.
title Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2408.00890