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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2408.01369 |
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| _version_ | 1866910575587491840 |
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| author | McFadden, Anthony Goswami, Aranya Zhao, Tongyu van Schijndel, Teun Larson, Trevyn F. Q. Sahu, Sudhir Gill, Stephen Lecocq, Florent Simmonds, Raymond Palmstrøm, Chris |
| author_facet | McFadden, Anthony Goswami, Aranya Zhao, Tongyu van Schijndel, Teun Larson, Trevyn F. Q. Sahu, Sudhir Gill, Stephen Lecocq, Florent Simmonds, Raymond Palmstrøm, Chris |
| contents | Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below $300nm$ with an approximate total height of 3$μ$m are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional $Al/AlO_x/Al$ Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500k and qubit $T_1$ times greater than 25$μ$s. These results suggest that Si-Fins are a promising technology for applications that require low loss, compact, superconductor-based capacitors with minimal stray capacitance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_01369 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications McFadden, Anthony Goswami, Aranya Zhao, Tongyu van Schijndel, Teun Larson, Trevyn F. Q. Sahu, Sudhir Gill, Stephen Lecocq, Florent Simmonds, Raymond Palmstrøm, Chris Quantum Physics Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below $300nm$ with an approximate total height of 3$μ$m are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional $Al/AlO_x/Al$ Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500k and qubit $T_1$ times greater than 25$μ$s. These results suggest that Si-Fins are a promising technology for applications that require low loss, compact, superconductor-based capacitors with minimal stray capacitance. |
| title | Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2408.01369 |