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Main Authors: Huyen, Vu Thi Ngoc, Bae, Soungmin, Costa-Amaral, Rafael, Kumagai, Yu
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2408.01939
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_version_ 1866908663801708544
author Huyen, Vu Thi Ngoc
Bae, Soungmin
Costa-Amaral, Rafael
Kumagai, Yu
author_facet Huyen, Vu Thi Ngoc
Bae, Soungmin
Costa-Amaral, Rafael
Kumagai, Yu
contents Although $β$-TeO$_2$ is a promising $p$-type transparent conducting oxide (TCO) due to the large optical gap ($\sim$ 3.7 eV) and a light effective hole mass, its hole dopability still remains unexplored. In this work, electronic structure of $β$-TeO$_2$ and its point defects are investigated using the HSEsol functional with the band-gap-tuned mixing parameter. Our calculations reveal that $β$-TeO$_2$ exhibits a significant difference between the fundamental and optical band gaps because lower energy optical transitions are dipole forbidden. Additionally, it has a low hole effective mass, especially in-plane. The point defect calculations show that $β$-TeO$_2$ is intrinsically an insulator. From systematic calculations of the trivalent dopants as well as hydrogen, Bi doping is suggested as the best candidate as an acceptor dopant. This work paves the way for the material design of the $p$-type $β$-TeO$_2$.
format Preprint
id arxiv_https___arxiv_org_abs_2408_01939
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Native defects and $p$-type dopability in transparent $β$-TeO$_2$: A first-principles study
Huyen, Vu Thi Ngoc
Bae, Soungmin
Costa-Amaral, Rafael
Kumagai, Yu
Materials Science
Although $β$-TeO$_2$ is a promising $p$-type transparent conducting oxide (TCO) due to the large optical gap ($\sim$ 3.7 eV) and a light effective hole mass, its hole dopability still remains unexplored. In this work, electronic structure of $β$-TeO$_2$ and its point defects are investigated using the HSEsol functional with the band-gap-tuned mixing parameter. Our calculations reveal that $β$-TeO$_2$ exhibits a significant difference between the fundamental and optical band gaps because lower energy optical transitions are dipole forbidden. Additionally, it has a low hole effective mass, especially in-plane. The point defect calculations show that $β$-TeO$_2$ is intrinsically an insulator. From systematic calculations of the trivalent dopants as well as hydrogen, Bi doping is suggested as the best candidate as an acceptor dopant. This work paves the way for the material design of the $p$-type $β$-TeO$_2$.
title Native defects and $p$-type dopability in transparent $β$-TeO$_2$: A first-principles study
topic Materials Science
url https://arxiv.org/abs/2408.01939