Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909000270872576 |
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| author | Babichev, Andrey Pirogov, Evgeniy Sobolev, Maksim Blokhin, Sergey Shernyakov, Yuri Maximov, Mikhail Lutetskiy, Andrey Pikhtin, Nikita Karachinsky, Leonid Novikov, Innokenty Egorov, Anton Tian, Si-Cong Bimberg, Dieter |
| author_facet | Babichev, Andrey Pirogov, Evgeniy Sobolev, Maksim Blokhin, Sergey Shernyakov, Yuri Maximov, Mikhail Lutetskiy, Andrey Pikhtin, Nikita Karachinsky, Leonid Novikov, Innokenty Egorov, Anton Tian, Si-Cong Bimberg, Dieter |
| contents | A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2408_02469 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions Babichev, Andrey Pirogov, Evgeniy Sobolev, Maksim Blokhin, Sergey Shernyakov, Yuri Maximov, Mikhail Lutetskiy, Andrey Pikhtin, Nikita Karachinsky, Leonid Novikov, Innokenty Egorov, Anton Tian, Si-Cong Bimberg, Dieter Mesoscale and Nanoscale Physics A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer compositions were grown. Using a superlattice allows to downshift the energy position of the miniband, as compared to thin InGaAs quantum wells, having the same composition, being beneficial for high-temperature operation. Very low internal loss (~6$cm^{-1}$), low transparency current density of ~500$ A/cm^2$, together with 46$ cm^{-1}$ modal gain and 53 % internal efficiency were observed for broad-area lasers with an active region based on a highly strained $In_{0.74}Ga_{0.26}As/In_{0.53}Al_{0.25}Ga_{0.22}As$ superlattice. Characteristic temperatures $T_0$ and $T_1$ were improved up to 76 K and 100 K, respectively. These data suggest that such superlattices have also the potential to much improve VCSEL properties at this wavelength. |
| title | Gain and Threshold Improvements of 1300 nm Lasers based on InGaAs/InAlGaAs Superlattice Active Regions |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.02469 |