A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform
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2024
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| _version_ | 1866908350908727296 |
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| author | Xie, Xiaojun Wei, Chao He, Xingchen Chen, Yake Wang, Chenghao Sun, Jihui Jiang, Lin Ye, Jia Zou, Xihua Pan, Wei Yan, Lianshan |
| author_facet | Xie, Xiaojun Wei, Chao He, Xingchen Chen, Yake Wang, Chenghao Sun, Jihui Jiang, Lin Ye, Jia Zou, Xihua Pan, Wei Yan, Lianshan |
| contents | The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO3 heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO_3 platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO3 wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I-Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit/s. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit/s/λwith a 100-Gbaud 64-QAM signal and 512 Gbit/s/λwith a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ/bit and 13.5 fJ/bit is achieved for 200 Gbit/s and 400 Gbit/s capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_02878 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform Xie, Xiaojun Wei, Chao He, Xingchen Chen, Yake Wang, Chenghao Sun, Jihui Jiang, Lin Ye, Jia Zou, Xihua Pan, Wei Yan, Lianshan Optics Applied Physics The rapid advancement of the thin-film lithium niobate (LiNbO3) platform has established it as a premier choice for high-performance photonics integrated circuits. However, the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components, necessitating a robust wafer-level LiNbO3 heterogeneous integration platform. Despite its critical role in enabling ultrahigh-speed optical interconnects, as well as optical mmWave/THz sensing and communication, the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO_3 platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges, we have developed a scalable, high-speed InP-LiNbO3 wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz, capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover, we demonstrate a seven-channel, single-polarization I-Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit/s. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit/s/λwith a 100-Gbaud 64-QAM signal and 512 Gbit/s/λwith a 128-Gbaud 16-QAM signal. Furthermore, energy consumption as low as 9.6 fJ/bit and 13.5 fJ/bit is achieved for 200 Gbit/s and 400 Gbit/s capacities, respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects, as well as optical mmWave/THz sensing and communication. |
| title | A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2408.02878 |