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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2024
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| Online Access: | https://arxiv.org/abs/2408.03031 |
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| _version_ | 1866917848360681472 |
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| author | Guo, Shu-Ting Zou, Fangxin |
| author_facet | Guo, Shu-Ting Zou, Fangxin |
| contents | The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the temperature-dependent electrical resistivity of GFs, where, as the pre-stretch strain level increased, the distinct temperature dependence of the resistivity of a GF sample would change and might even exhibit a notable transition from negative dependence to positive dependence. We attempted to interpret the phenomenon by proposing a new conduction network model that represents GF structures as interconnected graphene islands and island/island conduction junctions and incorporates three conduction mechanisms: thermally activated conduction, phonon-limited conduction, and fluctuation-induced tunneling conduction. By fitting-assisted analysis, we found that the temperature dependence of the resistivity of a GF sample primarily relies on the discrete quantities of graphene islands and island/island conduction junctions, and the resistivity originating from each conduction mechanism. As pre-stretch strain level increases, these factors would change due to conduction network alteration, local strain-induced phonon hardening, and local strain-induced transport gap modulation, all resulting from pre-stretching. Our results offer valuable insights into the optimization of GFs-based stretchable electronic devices, such as performance enhancement through structural modifications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_03031 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Stretch-induced tunability of electrical transport properties of three-dimensional graphene-based foam structures Guo, Shu-Ting Zou, Fangxin Materials Science Mesoscale and Nanoscale Physics The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the temperature-dependent electrical resistivity of GFs, where, as the pre-stretch strain level increased, the distinct temperature dependence of the resistivity of a GF sample would change and might even exhibit a notable transition from negative dependence to positive dependence. We attempted to interpret the phenomenon by proposing a new conduction network model that represents GF structures as interconnected graphene islands and island/island conduction junctions and incorporates three conduction mechanisms: thermally activated conduction, phonon-limited conduction, and fluctuation-induced tunneling conduction. By fitting-assisted analysis, we found that the temperature dependence of the resistivity of a GF sample primarily relies on the discrete quantities of graphene islands and island/island conduction junctions, and the resistivity originating from each conduction mechanism. As pre-stretch strain level increases, these factors would change due to conduction network alteration, local strain-induced phonon hardening, and local strain-induced transport gap modulation, all resulting from pre-stretching. Our results offer valuable insights into the optimization of GFs-based stretchable electronic devices, such as performance enhancement through structural modifications. |
| title | Stretch-induced tunability of electrical transport properties of three-dimensional graphene-based foam structures |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.03031 |