Enhance Ferroelectric Structural Distortion via Doping Ca in Epitaxial h-Lu1-xCaxMnO3 Thin Films
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866909280546848768 |
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| author | Yang, Detian Liu, Yaohua Xu, Xiaoshan |
| author_facet | Yang, Detian Liu, Yaohua Xu, Xiaoshan |
| contents | Unlike proper ferroelectricity, the improper ferroelectricity in multiferroic rare-earth manganites h-ReMnO3 (Re=La-Lu,Y,Sc) thin films features a unique geometric distortion and stays immune to the depolarizing field in the ultra-thin limit. Here, we have managed to tune and boost ferroelectric geometric distortion of h-LuMnO3 thin films by doping Ca. Compressively strained h-Lu1-xCaxMnO3(x=0.1,0.2,0.3,0.4,0.5)epitaxial thin films were stabilized over sapphire substrates by a h-ScFeO3 buffer layer. When the doping concentration x>=0.2, the common substrate-induced interface clamping effect that suppresses improper ferroelectricity of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to enhance improper ferroelectricity of hexagonal manganites. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_03044 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Enhance Ferroelectric Structural Distortion via Doping Ca in Epitaxial h-Lu1-xCaxMnO3 Thin Films Yang, Detian Liu, Yaohua Xu, Xiaoshan Materials Science Unlike proper ferroelectricity, the improper ferroelectricity in multiferroic rare-earth manganites h-ReMnO3 (Re=La-Lu,Y,Sc) thin films features a unique geometric distortion and stays immune to the depolarizing field in the ultra-thin limit. Here, we have managed to tune and boost ferroelectric geometric distortion of h-LuMnO3 thin films by doping Ca. Compressively strained h-Lu1-xCaxMnO3(x=0.1,0.2,0.3,0.4,0.5)epitaxial thin films were stabilized over sapphire substrates by a h-ScFeO3 buffer layer. When the doping concentration x>=0.2, the common substrate-induced interface clamping effect that suppresses improper ferroelectricity of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to enhance improper ferroelectricity of hexagonal manganites. |
| title | Enhance Ferroelectric Structural Distortion via Doping Ca in Epitaxial h-Lu1-xCaxMnO3 Thin Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2408.03044 |