Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si

Fuente: arXiv

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Bibliographic Details
Main Authors:	Smith, Trevor R., McDermott, Spencer, Patel, Vatsalkumar, Anthony, Ross, Hedge, Manu, Knights, Andrew P., Lewis, Ryan B.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2408.03253