Fractional Chern insulators in moiré flat bands with high Chern numbers
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866917742351745024 |
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| author | Wang, Chonghao Shen, Xiaoyang Guo, Ruiping Wang, Chong Duan, Wenhui Xu, Yong |
| author_facet | Wang, Chonghao Shen, Xiaoyang Guo, Ruiping Wang, Chong Duan, Wenhui Xu, Yong |
| contents | Recent discoveries of zero-field fractional Chern insulators in moiré materials have attracted intensive research interests. However, most current theoretical and experimental attempts focus on systems with low Chern number bands, in analogy to the Landau levels. Here we propose candidate material systems for realizing fractional Chern insulators with higher Chern numbers. The material setup involves $Γ$-valley twisted homobilayer transition metal dichalcogenides in proximity to a skyrmion lattice. The skyrmion exchange potential induces a flat band with a high Chern number $C = -2$. Using the momentum-space projected exact diagonalization method, we perform a comprehensive study at various filling factors, confirming the generalized Jain series. Our research provides theoretical guidance on realizing unconventional fractional Chern insulators beyond the Landau level picture. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_03305 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Fractional Chern insulators in moiré flat bands with high Chern numbers Wang, Chonghao Shen, Xiaoyang Guo, Ruiping Wang, Chong Duan, Wenhui Xu, Yong Strongly Correlated Electrons Recent discoveries of zero-field fractional Chern insulators in moiré materials have attracted intensive research interests. However, most current theoretical and experimental attempts focus on systems with low Chern number bands, in analogy to the Landau levels. Here we propose candidate material systems for realizing fractional Chern insulators with higher Chern numbers. The material setup involves $Γ$-valley twisted homobilayer transition metal dichalcogenides in proximity to a skyrmion lattice. The skyrmion exchange potential induces a flat band with a high Chern number $C = -2$. Using the momentum-space projected exact diagonalization method, we perform a comprehensive study at various filling factors, confirming the generalized Jain series. Our research provides theoretical guidance on realizing unconventional fractional Chern insulators beyond the Landau level picture. |
| title | Fractional Chern insulators in moiré flat bands with high Chern numbers |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2408.03305 |