Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866929634654814208 |
|---|---|
| author | Abe, Takaya Shinozaki, Motoya Matsumura, Kazuma Aizawa, Takumi Kumasaka, Takeshi Ito, Norikazu Tanaka, Taketoshi Nakahara, Ken Otsuka, Tomohiro |
| author_facet | Abe, Takaya Shinozaki, Motoya Matsumura, Kazuma Aizawa, Takumi Kumasaka, Takeshi Ito, Norikazu Tanaka, Taketoshi Nakahara, Ken Otsuka, Tomohiro |
| contents | GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under the current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find that the gate capacitance is significantly decreased by the current collapse. This suggests that the current collapse changes the distribution of trapped electrons at the device surface, which is reported in the previous study by operando X-ray spectroscopy. Also, we show external control of quantum dot formation, previously challenging in an FET structure, by using current collapse. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_04109 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics Abe, Takaya Shinozaki, Motoya Matsumura, Kazuma Aizawa, Takumi Kumasaka, Takeshi Ito, Norikazu Tanaka, Taketoshi Nakahara, Ken Otsuka, Tomohiro Mesoscale and Nanoscale Physics GaN is expected to be a key material for next-generation electronics due to its interesting properties. However, the current collapse poses a challenge to the application of GaN FETs to electronic devices. In this study, we investigate the formation of quantum dots in GaN FETs under the current collapse. By comparing the Coulomb diamond between standard measurements and those under current collapse, we find that the gate capacitance is significantly decreased by the current collapse. This suggests that the current collapse changes the distribution of trapped electrons at the device surface, which is reported in the previous study by operando X-ray spectroscopy. Also, we show external control of quantum dot formation, previously challenging in an FET structure, by using current collapse. |
| title | Probing electron trapping by current collapse in GaN/AlGaN FETs utilizing quantum transport characteristics |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.04109 |