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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2408.05621 |
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| _version_ | 1866929455442690048 |
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| author | Yang, Zihao Wei, Xiucheng Roy, Pinku Zhang, Di Lu, Ping Dhole, Samyak Wang, Haiyan Cucciniello, Nicholas Patibandla, Nag Chen, Zhebo Zeng, Hao Jia, Quanxi Zhu, Mingwei |
| author_facet | Yang, Zihao Wei, Xiucheng Roy, Pinku Zhang, Di Lu, Ping Dhole, Samyak Wang, Haiyan Cucciniello, Nicholas Patibandla, Nag Chen, Zhebo Zeng, Hao Jia, Quanxi Zhu, Mingwei |
| contents | We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_05621 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer Yang, Zihao Wei, Xiucheng Roy, Pinku Zhang, Di Lu, Ping Dhole, Samyak Wang, Haiyan Cucciniello, Nicholas Patibandla, Nag Chen, Zhebo Zeng, Hao Jia, Quanxi Zhu, Mingwei Superconductivity Materials Science We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications. |
| title | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| topic | Superconductivity Materials Science |
| url | https://arxiv.org/abs/2408.05621 |