Cheng, B., Kramer, P. L., Trigo, M., Liu, M., Uher, C., Reis, D. A., . . . Hoffmann, M. C. (2024). Terahertz-induced tunnel ionization drives coherent Raman-active phonon in Bismuth.
Citazione stile Chigago Style (17a edizione)Cheng, Bing, Patrick L. Kramer, Mariano Trigo, Mengkun Liu, Ctirad Uher, David A. Reis, Zhi-Xun Shen, Jonathan A. Sobota, e Matthias. C. Hoffmann. Terahertz-induced Tunnel Ionization Drives Coherent Raman-active Phonon in Bismuth. 2024.
Citatione MLA (9a ed.)Cheng, Bing, et al. Terahertz-induced Tunnel Ionization Drives Coherent Raman-active Phonon in Bismuth. 2024.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.