Terahertz-induced tunnel ionization drives coherent Raman-active phonon in Bismuth
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866908567516217344 |
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| author | Cheng, Bing Kramer, Patrick L. Trigo, Mariano Liu, Mengkun Uher, Ctirad Reis, David A. Shen, Zhi-Xun Sobota, Jonathan A. Hoffmann, Matthias. C. |
| author_facet | Cheng, Bing Kramer, Patrick L. Trigo, Mariano Liu, Mengkun Uher, Ctirad Reis, David A. Shen, Zhi-Xun Sobota, Jonathan A. Hoffmann, Matthias. C. |
| contents | Driving coherent lattice motion with THz pulses has emerged as a novel pathway for achieving dynamic stabilization of exotic phases that are inaccessible in equilibrium quantum materials. In this work, we present a previously unexplored mechanism for THz excitation of Raman-active phonons. We show that intense THz pulses centered at 1 THz can excite the Raman-active $A_{1g}$ phonon mode at 2.9 THz in a bismuth film. We rule out the possibilities of the phonon being excited through conventional anharmonic coupling to other modes or via a THz sum frequency process. Instead, we demonstrate that the THz-driven tunnel ionization provides a plausible means of creating a displacive driving force to initiate the phonon oscillations. Our work highlights a new mechanism for exciting coherent phonons, offering potential for dynamic control over the electronic and structural properties of semimetals and narrow-band semiconductors on ultrafast timescales. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_05770 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Terahertz-induced tunnel ionization drives coherent Raman-active phonon in Bismuth Cheng, Bing Kramer, Patrick L. Trigo, Mariano Liu, Mengkun Uher, Ctirad Reis, David A. Shen, Zhi-Xun Sobota, Jonathan A. Hoffmann, Matthias. C. Mesoscale and Nanoscale Physics Materials Science Driving coherent lattice motion with THz pulses has emerged as a novel pathway for achieving dynamic stabilization of exotic phases that are inaccessible in equilibrium quantum materials. In this work, we present a previously unexplored mechanism for THz excitation of Raman-active phonons. We show that intense THz pulses centered at 1 THz can excite the Raman-active $A_{1g}$ phonon mode at 2.9 THz in a bismuth film. We rule out the possibilities of the phonon being excited through conventional anharmonic coupling to other modes or via a THz sum frequency process. Instead, we demonstrate that the THz-driven tunnel ionization provides a plausible means of creating a displacive driving force to initiate the phonon oscillations. Our work highlights a new mechanism for exciting coherent phonons, offering potential for dynamic control over the electronic and structural properties of semimetals and narrow-band semiconductors on ultrafast timescales. |
| title | Terahertz-induced tunnel ionization drives coherent Raman-active phonon in Bismuth |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2408.05770 |