Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films

Fuente: arXiv
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Main Authors: Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke, Teeter, Jordan, Da, Bingcheng, Kargar, Fariborz, Fu, Houqiang, Balandin, Alexander A.
Format: Preprint
Published: 2024
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author Wright, Dylan
Mudiyanselage, Dinusha Herath
Guzman, Erick
Fu, Xuke
Teeter, Jordan
Da, Bingcheng
Kargar, Fariborz
Fu, Houqiang
Balandin, Alexander A.
author_facet Wright, Dylan
Mudiyanselage, Dinusha Herath
Guzman, Erick
Fu, Xuke
Teeter, Jordan
Da, Bingcheng
Kargar, Fariborz
Fu, Houqiang
Balandin, Alexander A.
contents We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.
format Preprint
id arxiv_https___arxiv_org_abs_2408_06951
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films
Wright, Dylan
Mudiyanselage, Dinusha Herath
Guzman, Erick
Fu, Xuke
Teeter, Jordan
Da, Bingcheng
Kargar, Fariborz
Fu, Houqiang
Balandin, Alexander A.
Materials Science
Mesoscale and Nanoscale Physics
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin-film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ~300 m/s at the doping level of 3 x 10^19 1/cm3. Knowledge of the acoustic phonon velocities can be used to optimize ultra-wide bandgap semiconductor heterostructures and minimize the thermal boundary resistance of high-power devices.
title Acoustic and Optical Phonon Frequencies and Acoustic Phonon Velocities in Silicon-Doped Aluminum Nitride Thin Films
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2408.06951