Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Fuente: arXiv

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Bibliographic Details
Main Authors:	Esteki, Ardeshir, Riazimehr, Sarah, Piacentini, Agata, Knoops, Harm, Macco, Bart, Otto, Martin, Rinke, Gordon, Wang, Zhenxing, Ran, Ke, Mayer, Joachim, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Neumaier, Daniel, Daus, Alwin, Lemme, Max C.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2408.07183