Copertina

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Esteki, Ardeshir, Riazimehr, Sarah, Piacentini, Agata, Knoops, Harm, Macco, Bart, Otto, Martin, Rinke, Gordon, Wang, Zhenxing, Ran, Ke, Mayer, Joachim, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Neumaier, Daniel, Daus, Alwin, Lemme, Max C.
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

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