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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| Online Access: | https://arxiv.org/abs/2408.07216 |
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| _version_ | 1866929673103998976 |
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| author | Qu, Chunlin Maini, Isha Guo, Qing Stacey, Alastair Moran, David A. J. |
| author_facet | Qu, Chunlin Maini, Isha Guo, Qing Stacey, Alastair Moran, David A. J. |
| contents | In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 μm$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_07216 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current Qu, Chunlin Maini, Isha Guo, Qing Stacey, Alastair Moran, David A. J. Mesoscale and Nanoscale Physics In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 μm$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility. |
| title | Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.07216 |