Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866910565152063488 |
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| author | Xu, Linqiang Liu, Shiqi Li, Qiuhui Li, Ying Fang, Shibo Guo, Ying Ang, Yee Sin Yang, Chen Lu, Jing |
| author_facet | Xu, Linqiang Liu, Shiqi Li, Qiuhui Li, Ying Fang, Shibo Guo, Ying Ang, Yee Sin Yang, Chen Lu, Jing |
| contents | Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm Lg 7 armchair-edge GNR (7 AGNR) FETs. The on-state current, delay time, and power dissipation of the n-type and p-type 7 AGNR FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when Lg is reduced to 3 nm. Remarkably, the 7 AGNR FETs exhibit superior n-type and p-type symmetry to the 7-9-7 AGNR FETs due to the more symmetrical electron/hole effective masses. Compared to the monolayer MoS2 and MoTe2 counterparts, the 7 AGNR FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNR in advancing CMOS electronics beyond silicon. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_07338 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications Xu, Linqiang Liu, Shiqi Li, Qiuhui Li, Ying Fang, Shibo Guo, Ying Ang, Yee Sin Yang, Chen Lu, Jing Mesoscale and Nanoscale Physics Materials Science Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm Lg 7 armchair-edge GNR (7 AGNR) FETs. The on-state current, delay time, and power dissipation of the n-type and p-type 7 AGNR FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when Lg is reduced to 3 nm. Remarkably, the 7 AGNR FETs exhibit superior n-type and p-type symmetry to the 7-9-7 AGNR FETs due to the more symmetrical electron/hole effective masses. Compared to the monolayer MoS2 and MoTe2 counterparts, the 7 AGNR FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNR in advancing CMOS electronics beyond silicon. |
| title | Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2408.07338 |