Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866913467848458240 |
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| author | Xu, Linqiang Zhao, Liya Lau, Chit Siong Zhang, Pan Xu, Lianqiang Li, Qiuhui Fang, Shibo Ang, Yee Sin Sun, Xiaotian Lu, Jing |
| author_facet | Xu, Linqiang Zhao, Liya Lau, Chit Siong Zhang, Pan Xu, Lianqiang Li, Qiuhui Fang, Shibo Ang, Yee Sin Sun, Xiaotian Lu, Jing |
| contents | Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspired by the successfully grown high-hole mobility bilayer (BL) beta tellurium dioxide (\b{eta}-TeO2), we investigate the performance of sub-5-nm-Lg BL \b{eta}-TeO2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL \b{eta}-TeO2 yields different transport properties. In the y-direction, both the sub-5-nm-Lg n-type and p-type BL \b{eta}-TeO2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm-Lg oxide semiconductor FETs. As to the x-direction, the n-type BL \b{eta}-TeO2 FETs satisfy both the ITRS HP and low-power (LP) requirements with Lg down to 3 nm. Consequently, our work shed light on the tremendous prospects of BL \b{eta}-TeO2 for CMOS application. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_07339 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS Xu, Linqiang Zhao, Liya Lau, Chit Siong Zhang, Pan Xu, Lianqiang Li, Qiuhui Fang, Shibo Ang, Yee Sin Sun, Xiaotian Lu, Jing Mesoscale and Nanoscale Physics Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspired by the successfully grown high-hole mobility bilayer (BL) beta tellurium dioxide (\b{eta}-TeO2), we investigate the performance of sub-5-nm-Lg BL \b{eta}-TeO2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL \b{eta}-TeO2 yields different transport properties. In the y-direction, both the sub-5-nm-Lg n-type and p-type BL \b{eta}-TeO2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm-Lg oxide semiconductor FETs. As to the x-direction, the n-type BL \b{eta}-TeO2 FETs satisfy both the ITRS HP and low-power (LP) requirements with Lg down to 3 nm. Consequently, our work shed light on the tremendous prospects of BL \b{eta}-TeO2 for CMOS application. |
| title | Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.07339 |