High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch

Fuente: arXiv
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Autori principali: Huang, Ke, Fu, Hailong, Watanabe, Kenji, Taniguchi, Takashi, Zhu, Jun
Natura: Preprint
Pubblicazione: 2024
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author Huang, Ke
Fu, Hailong
Watanabe, Kenji
Taniguchi, Takashi
Zhu, Jun
author_facet Huang, Ke
Fu, Hailong
Watanabe, Kenji
Taniguchi, Takashi
Zhu, Jun
contents Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
format Preprint
id arxiv_https___arxiv_org_abs_2408_07804
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch
Huang, Ke
Fu, Hailong
Watanabe, Kenji
Taniguchi, Takashi
Zhu, Jun
Mesoscale and Nanoscale Physics
Materials Science
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. Here we show wide resistance plateaus in kink states - a manifestation of the quantum valley Hall effect in Bernal bilayer graphene - quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 Kelvin and is flat within a dc bias window of tens of mV. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
title High-Temperature Quantum Valley Hall Effect with Quantized Resistance and a Topological Switch
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2408.07804