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Autores principales: Huang, Yuxiang, Ke, Ziqi, He, Wenlong
Formato: Preprint
Publicado: 2024
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Acceso en línea:https://arxiv.org/abs/2408.08124
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author Huang, Yuxiang
Ke, Ziqi
He, Wenlong
author_facet Huang, Yuxiang
Ke, Ziqi
He, Wenlong
contents This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.
format Preprint
id arxiv_https___arxiv_org_abs_2408_08124
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Sub-terahertz field emission transistors with selfpackaged microcavities
Huang, Yuxiang
Ke, Ziqi
He, Wenlong
Plasma Physics
This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.
title Sub-terahertz field emission transistors with selfpackaged microcavities
topic Plasma Physics
url https://arxiv.org/abs/2408.08124