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| Autores principales: | , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2408.08124 |
| Etiquetas: |
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- This paper presents the design of a vertical structure terahertz field emission transistor that utilizes a high-angle oblique deposition method to form a self-packaged vacuum microcavity. The simulation demonstrates that the self-packaged microcavity can effectively mitigate the potential impact of conventional field emission transistors on surrounding solid-state circuits, thereby improving the frequency performance and stability of the device. The proposed design exhibits a cutoff frequency at the sub-terahertz level.