Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Fuente: arXiv

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Bibliographic Details
Main Authors:	Dobney, C. P., Nasir, A., See, P., Ford, C. J. B., Griffiths, J. P., Chen, C., Ritchie, D. A., Kataoka, M.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2408.08423