Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure
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arXiv
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| Format: | Preprint |
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2024
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| author | Dobney, C. P. Nasir, A. See, P. Ford, C. J. B. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. |
| author_facet | Dobney, C. P. Nasir, A. See, P. Ford, C. J. B. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. |
| contents | We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ~8 nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_08423 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure Dobney, C. P. Nasir, A. See, P. Ford, C. J. B. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. Applied Physics Mesoscale and Nanoscale Physics We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ~8 nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources. |
| title | Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.08423 |