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Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Dobney, C. P., Nasir, A., See, P., Ford, C. J. B., Griffiths, J. P., Chen, C., Ritchie, D. A., Kataoka, M.
Format:	Preprint
Publié:	2024
Sujets:	Applied Physics Mesoscale and Nanoscale Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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