AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910567691714560 |
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| author | Liu, Yang Li, Yiran Acharya, Sudip Zhou, Jie Gong, Jiarui Abrand, Alireza Lu, Yi Vincent, Daniel Haessly, Samuel Mohseni, Parsian K. Yu, Shui-Qing Ma, Zhenqiang |
| author_facet | Liu, Yang Li, Yiran Acharya, Sudip Zhou, Jie Gong, Jiarui Abrand, Alireza Lu, Yi Vincent, Daniel Haessly, Samuel Mohseni, Parsian K. Yu, Shui-Qing Ma, Zhenqiang |
| contents | This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_08451 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$ Liu, Yang Li, Yiran Acharya, Sudip Zhou, Jie Gong, Jiarui Abrand, Alireza Lu, Yi Vincent, Daniel Haessly, Samuel Mohseni, Parsian K. Yu, Shui-Qing Ma, Zhenqiang Applied Physics Materials Science This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices. |
| title | AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$ |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2408.08451 |