Copertina

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Liu, Yang, Li, Yiran, Acharya, Sudip, Zhou, Jie, Gong, Jiarui, Abrand, Alireza, Lu, Yi, Vincent, Daniel, Haessly, Samuel, Mohseni, Parsian K., Yu, Shui-Qing, Ma, Zhenqiang
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
di: Liu, Yang, et al.
Pubblicazione: (2024)

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
di: Zhou, Jie, et al.
Pubblicazione: (2024)

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
di: Zhou, Jie, et al.
Pubblicazione: (2025)

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
di: Jie Zhou, et al.
Pubblicazione: (2026)

Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures
di: Ashrafganjoie, Mehdi, et al.
Pubblicazione: (2026)

Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode
di: Haris Naeem Abbasi, et al.
Pubblicazione: (2024)

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
di: Acharya, Sudip, et al.
Pubblicazione: (2024)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
di: Abbasi, Haris Naeem, et al.
Pubblicazione: (2024)

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
di: Rudie, Justin, et al.
Pubblicazione: (2025)

Neutralizing Optical Defects in GeSn
di: Eldose, Nirosh M., et al.
Pubblicazione: (2025)

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
di: Zhang, Diandian, et al.
Pubblicazione: (2025)

Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy
di: Giorgos Boras, et al.
Pubblicazione: (2025)

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
di: Gunder, Calbi, et al.
Pubblicazione: (2023)

Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
di: Thai, Quang Minh, et al.
Pubblicazione: (2026)

High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
di: Meng‐Hsien Chou, et al.
Pubblicazione: (2024)

Nonlinear integrated quantum photonics with AlGaAs
di: Baboux, F., et al.
Pubblicazione: (2026)

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
di: Mann, Matthew, et al.
Pubblicazione: (2024)

Coherence of Elementary Excitations in Disordered GaAs/AlGaAs Superlattices
di: Yu. A. Pusep
Pubblicazione: (2006)

Slowly generated anomalously large nuclear field in bulk n-AlGaAs
di: Shen, A., et al.
Pubblicazione: (2024)

Broadband Parametric Amplification in AlGaAs‐on‐Insulator Nanowaveguides
di: Yanjing Zhao, et al.
Pubblicazione: (2026)

Broadband parametric amplification in AlGaAs-on-insulator nanowaveguides
di: Zhao, Yanjing, et al.
Pubblicazione: (2026)

Phase‐Coherent Transport in GeSn Alloys on Si
di: Prateek Kaul, et al.
Pubblicazione: (2024)

Modeling n$n$‐Type GaAs/AlGaAs Double Quantum Well Properties with Schrödinger‐Poisson Equations
di: M. Jaouane, et al.
Pubblicazione: (2025)

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3
di: Tsai, Tsung-Han, et al.
Pubblicazione: (2026)

Electronic structure of delta shaped AlGaAs/GaAs quantum wells
di: M.R. Muro-Ortega
Pubblicazione: (2007)

Photo-birefringent effects in crystalline AlGaAs mirror coatings
di: Ma, Chun Yu, et al.
Pubblicazione: (2026)

Tensor-driven geometric phase in nonlinear AlGaAs metasurfaces
di: Guercio, Giorgio, et al.
Pubblicazione: (2026)

Dispersion engineered AlGaAs-on-insulator nanophotonics by distributed feedback
di: Talenti, Francesco Rinaldo, et al.
Pubblicazione: (2025)

Strong coupling of polaritons at room temperature in a GaAs/AlGaAs structure
di: Alnatah, Hassan, et al.
Pubblicazione: (2025)

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots
di: Zhang, Yiteng, et al.
Pubblicazione: (2024)

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
di: I. F. L. Dias
Pubblicazione: (2004)

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
di: Christopher R. Allemang, et al.
Pubblicazione: (2025)

Design of a compact, radiation tolerant AlGaAs Geiger photodiode
di: Downing, Matthew, et al.
Pubblicazione: (2024)

Bose-Einstein condensation of polaritons at room temperature in a GaAs/AlGaAs structure
di: Alnatah, Hassan, et al.
Pubblicazione: (2024)

Low-density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes
di: Da Silva, Saimon F. Covre, et al.
Pubblicazione: (2025)

Continuous‐wave GaAs/AlGaAs quantum cascade laser at 5.7 THz
di: Mohammad Shahili, et al.
Pubblicazione: (2024)

Photo-induced resistance resonance effect in modulation doped GaAs-AlGaAs heteroestructures
di: Mazzoni M.S.C. et al
Pubblicazione: (1998)

First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
di: Sewell, Kevin, et al.
Pubblicazione: (2024)

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells
di: Biegańska, Dąbrówka, et al.
Pubblicazione: (2024)

Temperature and doping dependencies of electron mobility in InAs, AlAs and AlGaAs at high electric field application
di: H. Arabshahi
Pubblicazione: (2008)