Valleytronics and negative differential resistance in cubic boron nitride: a first-principles study

Documenti analoghi

• Optical absorption and photoluminescence of single layer boron nitride from a first principles cumulant approach
  di: Marini, Giovanni, et al.
  Pubblicazione: (2024)
• Atomic layer etching of niobium nitride using sequential exposures of O$_2$ and H$_2$/SF$_6$ plasmas
  di: Hossain, Azmain A., et al.
  Pubblicazione: (2025)
• Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride
  di: Clua-Provost, T., et al.
  Pubblicazione: (2024)
• First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures
  di: Richaud, Elisa Serrano, et al.
  Pubblicazione: (2025)
• Interface phonon modes governing the ideal limit of thermal transport across diamond/cubic boron nitride interfaces
  di: Wang, Xiaonan, et al.
  Pubblicazione: (2025)