Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866909338116816896 |
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| author | Posti, Raghvendra Kalouni, Chirag Tiwari, Dhananjay K Roy, Debangsu |
| author_facet | Posti, Raghvendra Kalouni, Chirag Tiwari, Dhananjay K Roy, Debangsu |
| contents | Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems such as prolonged writing duration, and limitations on the number of magnetic states. Consequently, a universal method for achieving multistate in PMA-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with Néel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_08641 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields Posti, Raghvendra Kalouni, Chirag Tiwari, Dhananjay K Roy, Debangsu Mesoscale and Nanoscale Physics Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by initialization problems such as prolonged writing duration, and limitations on the number of magnetic states. Consequently, a universal method for achieving multistate in PMA-based stacks remains elusive. Here, we propose a general experimental method for achieving multistate without any initialization step in SOT-driven magnetization switching by integrating an external out-of-plane magnetic field. Motivated by macrospin calculations coupled with micromagnetic simulations, which demonstrate the plausibility of magnetization state changes due to out-of-plane field integration, we experimentally verify multistate behavior in Pt/Co/Pt and W/Pt/Co/AlOx stacks. The occurrence of multistate behavior is attributed to intermediate domain states with Néel domain walls. We achieve repeatable 18 multistate configurations with a minimal reduction in retentivity through energy barrier measurements, paving the way for efficient analog computing. |
| title | Initialization-Free Multistate Memristor: Synergy of Spin-Orbit Torque and Magnetic Fields |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.08641 |