Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910568300937216 |
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| author | Kong, Dejia Karbasizadeh, Siavash Narasimha, Ganesh Regmi, Paras Tao, Chenggang Mu, Sai Vasudevan, Rama Harrison, Ian Jin, Rongying Gai, Zheng |
| author_facet | Kong, Dejia Karbasizadeh, Siavash Narasimha, Ganesh Regmi, Paras Tao, Chenggang Mu, Sai Vasudevan, Rama Harrison, Ian Jin, Rongying Gai, Zheng |
| contents | EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations. Defects-induced local density of states (LDOS) modification with a triangular shape helps identify the surface terminations: Eu versus AsZn surface. While large bandgaps (~1.5 eV at 77 K) are observed on both pristine surfaces, the bandgap width is found to be very sensitive to local heterogeneity, such as defects and step edges, with the tendency of reduction. Combining experimental data with DFT simulations, we conclude that the modified bandgap in the heterogeneous area arises from Zn vacancies and/or substitution by As atoms. Our investigation offers important information for reevaluating the electron topology of the EuM2As2 family. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_08858 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals Kong, Dejia Karbasizadeh, Siavash Narasimha, Ganesh Regmi, Paras Tao, Chenggang Mu, Sai Vasudevan, Rama Harrison, Ian Jin, Rongying Gai, Zheng Materials Science EuM2As2 (M = Zn, Cd, In, Sn etc.) is an excellent material system for studying topological properties, which can be easily tuned by magnetism involved. Theoretical calculations predict gapped and flat bands in EuZn2As2 but gapless structure in EuCd2As2. In this work, low-temperature (77 K) cleaved EuZn2As2 crystals are studied using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory (DFT) calculations. Defects-induced local density of states (LDOS) modification with a triangular shape helps identify the surface terminations: Eu versus AsZn surface. While large bandgaps (~1.5 eV at 77 K) are observed on both pristine surfaces, the bandgap width is found to be very sensitive to local heterogeneity, such as defects and step edges, with the tendency of reduction. Combining experimental data with DFT simulations, we conclude that the modified bandgap in the heterogeneous area arises from Zn vacancies and/or substitution by As atoms. Our investigation offers important information for reevaluating the electron topology of the EuM2As2 family. |
| title | Large Bandgap Observed on the Surfaces of EuZn2As2 Single Crystals |
| topic | Materials Science |
| url | https://arxiv.org/abs/2408.08858 |