Copertina

Rapid quench annealing of Er implanted Si for quantum networking applications

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Hughes, Mark A., Liu, Huan, Brookfield, Adam, Wang, Tianrui, Crowe, Iain F., Dan, Yaping
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Quench rate dependence of center formation in Er implanted Si
di: Hughes, Mark A., et al.
Pubblicazione: (2025)

Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
di: Hernández, E. Nieto, et al.
Pubblicazione: (2023)

Tracking the creation of single photon emitters in AlN by implantation and annealing
di: Yağcı, H. B., et al.
Pubblicazione: (2025)

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
di: Steuer, Oliver, et al.
Pubblicazione: (2024)

High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature
di: Li, Xiaobo, et al.
Pubblicazione: (2025)

Error correction for encoded quantum annealing revisited
di: Nambu, Yoshihiro
Pubblicazione: (2024)

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon
di: Boukhvalov, D. W., et al.
Pubblicazione: (2024)

Influence of the pretreatment anneal on Co germanide Schottky contacts
di: Lajaunie, L., et al.
Pubblicazione: (2025)

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing
di: Korshakov, N. D., et al.
Pubblicazione: (2024)

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps
di: Fiorenza, Patrick, et al.
Pubblicazione: (2024)

Analytical photoresponses of gated nanowire photoconductors
di: Shen, Yinchu, et al.
Pubblicazione: (2024)

Optoelectronic Readout of single Er Adatom's Electronic States Adsorbed on the Si(100) Surface at Low Temperature (9K)
di: Duverger, Eric, et al.
Pubblicazione: (2023)

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications
di: Wang, Jiawei, et al.
Pubblicazione: (2024)

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
di: Neul, Malte, et al.
Pubblicazione: (2023)

Influence of the Ortho-II superstructure in the YBa$_2$Cu$_3$O$_{7-δ}$ Orthorhombic phase after annealing
di: Luccas, Roberto F., et al.
Pubblicazione: (2026)

Cryogenic microwave link for quantum local area networks
di: Yam, W. K., et al.
Pubblicazione: (2023)

Programmable interferometer: an application in quantum channels
di: Araujo, J. S., et al.
Pubblicazione: (2025)

Turnkey locking of quantum-dot lasers directly grown on Si
di: Dong, Bozhang, et al.
Pubblicazione: (2024)

Energy Shift with Coupling (ESC): a new quench protection method
di: Ravaioli, Emmanuele, et al.
Pubblicazione: (2024)

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
di: Fattal, I., et al.
Pubblicazione: (2025)

Holistic numerical simulation of a quenching process on a real-size multifilamentary superconducting coil
di: Xue, Cun, et al.
Pubblicazione: (2024)

Orbit symmetry breaking in MXene implements enhanced soft bioelectronic implants
di: Wu, Yizhang, et al.
Pubblicazione: (2024)

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
di: Steuer, Oliver, et al.
Pubblicazione: (2024)

Grayscale control of local magnetic properties with direct-write laser annealing
di: Riddiford, Lauren J., et al.
Pubblicazione: (2024)

Electro-thermal quench in metal-insulated nested REBCO coils for magnets over 40 T
di: Dadhich, Anang, et al.
Pubblicazione: (2026)

Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
di: Andrini, G., et al.
Pubblicazione: (2023)

InN nanowire solar cells on Si with amorphous Si interlayer deposited by sputtering
di: Sun, M., et al.
Pubblicazione: (2025)

Screening currents increase thermal quench propagation speed in ultra-high-field REBCO magnets
di: Pardo, Enric, et al.
Pubblicazione: (2025)

Crystallization of piezoceramic films on glass via flash lamp annealing
di: Song, Longfei, et al.
Pubblicazione: (2023)

Sensitive bioassay with an ultra-large dynamic range via microlaser ensemble quenching
di: Wu, Weishu, et al.
Pubblicazione: (2025)

Impact of Top SiO2 interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
di: Hu, Tao, et al.
Pubblicazione: (2024)

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
di: Rudie, Justin, et al.
Pubblicazione: (2025)

Tracking solid oxide cell electrode microstructural evolution during annealing by scanning 3D X-ray diffraction microscopy
di: Shukla, A., et al.
Pubblicazione: (2024)

Nonlocal and quantum advantages in network coding for multiple access channels
di: Yun, Jiyoung, et al.
Pubblicazione: (2023)

High Performance MoS2 Phototransistors Photogated by PN Junction
di: Khaleghi, Seyed Saleh Mousavi, et al.
Pubblicazione: (2024)

Enhancement of hole mobility in high-rate reactively sputtered Cu2O thin films induced by laser thermal annealing
di: Rezek, Jiri, et al.
Pubblicazione: (2024)

A novel and fast electromagnetic and electrothermal software for quench analysis of high field magnets
di: Dadhich, Anang, et al.
Pubblicazione: (2024)

Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
di: Wang, Xiqiao, et al.
Pubblicazione: (2024)

Thermal quench modeling of REBCO racetrack coils under conduction cooling at 30 K for aircraft electric propulsion motors
di: Hussain, Arif, et al.
Pubblicazione: (2025)

Photon emission gain in Er doped Si light emitting diodes by impact excitation
di: Liu, Huayou, et al.
Pubblicazione: (2025)