Efficient spin to charge conversion and spin memory loss mitigation in oriented $\text{RuO}_2$ films
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arXiv
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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866929463693934592 |
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| author | Mishra, Abhisek Rathore, Kshitij Singh Mahanta, Swayang Priya Bedanta, Subhankar |
| author_facet | Mishra, Abhisek Rathore, Kshitij Singh Mahanta, Swayang Priya Bedanta, Subhankar |
| contents | $\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for energy-efficient magnetic memory and logic devices. Additionally, the tunable thickness and crystallinity of $\text{RuO}_2$ thin films optimize torque efficiency for low-power switching. Spin pumping, a versatile method for investigating spin dynamics in $\text{RuO}_2$ thin films, has garnered considerable interest because of its straightforward, non-invasive and uncomplicated approach to addressing impedance mismatch and direct measurement of spintronic parameters. Here we present a systematic and detailed analysis on the efficient spin to charge conversion in (110)-oriented $\text{RuO}_2$ films with amorphous CoFeB as spin source. The spin Hall angle, and spin diffusion length were estimated to be 0.14 $\pm$ 0.01 and 4.58 $\pm$ 0.40 nm, respectively. The spin Hall conductivity of 998.89 $\pm$ 58.23 $\hbar \cdot \frac{Ω^{-1} \, \text{cm}^{-1}}{e}$ has been estimated which is theoretically predicted to be of the similar order. The interfacial spin transparency has been achieved to be 90%. We have shown that the spin memory loss at the $\text{RuO}_2$/CoFeB interface is 15%, which is very small. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_09566 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Efficient spin to charge conversion and spin memory loss mitigation in oriented $\text{RuO}_2$ films Mishra, Abhisek Rathore, Kshitij Singh Mahanta, Swayang Priya Bedanta, Subhankar Materials Science Mesoscale and Nanoscale Physics $\text{RuO}_2$, a transition metal oxide, is attracting attention in spintronics for its unique altermagnetic properties, which influence spin currents. Its ability to produce large spin-orbit torques and spin Hall effects is key for energy-efficient magnetic memory and logic devices. Additionally, the tunable thickness and crystallinity of $\text{RuO}_2$ thin films optimize torque efficiency for low-power switching. Spin pumping, a versatile method for investigating spin dynamics in $\text{RuO}_2$ thin films, has garnered considerable interest because of its straightforward, non-invasive and uncomplicated approach to addressing impedance mismatch and direct measurement of spintronic parameters. Here we present a systematic and detailed analysis on the efficient spin to charge conversion in (110)-oriented $\text{RuO}_2$ films with amorphous CoFeB as spin source. The spin Hall angle, and spin diffusion length were estimated to be 0.14 $\pm$ 0.01 and 4.58 $\pm$ 0.40 nm, respectively. The spin Hall conductivity of 998.89 $\pm$ 58.23 $\hbar \cdot \frac{Ω^{-1} \, \text{cm}^{-1}}{e}$ has been estimated which is theoretically predicted to be of the similar order. The interfacial spin transparency has been achieved to be 90%. We have shown that the spin memory loss at the $\text{RuO}_2$/CoFeB interface is 15%, which is very small. |
| title | Efficient spin to charge conversion and spin memory loss mitigation in oriented $\text{RuO}_2$ films |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.09566 |