Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913472095191040 |
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| author | Ruan, Hanzhi Zhi, Zhenghang Wu, Yuyang Liu, Jiuming Huang, Puyang Yao, Shan Liu, Xinqi Tang, Chenjia Yao, Qi Sun, Lu Zhang, Yifan Xiao, Yujie Che, Renchao Kou, Xufeng |
| author_facet | Ruan, Hanzhi Zhi, Zhenghang Wu, Yuyang Liu, Jiuming Huang, Puyang Yao, Shan Liu, Xinqi Tang, Chenjia Yao, Qi Sun, Lu Zhang, Yifan Xiao, Yujie Che, Renchao Kou, Xufeng |
| contents | The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_10032 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures Ruan, Hanzhi Zhi, Zhenghang Wu, Yuyang Liu, Jiuming Huang, Puyang Yao, Shan Liu, Xinqi Tang, Chenjia Yao, Qi Sun, Lu Zhang, Yifan Xiao, Yujie Che, Renchao Kou, Xufeng Materials Science Mesoscale and Nanoscale Physics The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications. |
| title | Tunable interfacial Rashba spin-orbit coupling in asymmetric Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2408.10032 |