A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866916773323866112 |
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| author | Chen, Huandong Liu, Yang Kumarasubramanian, Harish Surendran, Mythili Ravichandran, Jayakanth |
| author_facet | Chen, Huandong Liu, Yang Kumarasubramanian, Harish Surendran, Mythili Ravichandran, Jayakanth |
| contents | We present a general fabrication strategy for freestanding single-crystalline complex oxide device arrays via wet chemical etching-based microfabrication processes and epitaxial lift-off. Here, we used 0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_3$-0.5Ba(Zr$_{0.7}$Ti$_{0.3}$)O$_3$ (BCZT) as a model relaxor ferroelectric oxide system and La$_{0.7}$Sr$_{0.3}$MnO$_3$ as the sacrificial layer for demonstration. Arrays of SrRuO$_3$ (SRO) / BCZT / SRO ferroelectric capacitor mesas were first defined and isolated on the growth wafer, and then they were released using epitaxial lift-off with lithography-defined surrounding etching holes, after which the freestanding device arrays were integrated onto a glass substrate. Our proposed strategy sheds light on preparing various freestanding single-crystalline oxide devices and paves the way for their heterogeneous integration onto arbitrary substates. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2408_10071 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays Chen, Huandong Liu, Yang Kumarasubramanian, Harish Surendran, Mythili Ravichandran, Jayakanth Materials Science Applied Physics We present a general fabrication strategy for freestanding single-crystalline complex oxide device arrays via wet chemical etching-based microfabrication processes and epitaxial lift-off. Here, we used 0.5Ba(Zr$_{0.2}$Ti$_{0.8}$)O$_3$-0.5Ba(Zr$_{0.7}$Ti$_{0.3}$)O$_3$ (BCZT) as a model relaxor ferroelectric oxide system and La$_{0.7}$Sr$_{0.3}$MnO$_3$ as the sacrificial layer for demonstration. Arrays of SrRuO$_3$ (SRO) / BCZT / SRO ferroelectric capacitor mesas were first defined and isolated on the growth wafer, and then they were released using epitaxial lift-off with lithography-defined surrounding etching holes, after which the freestanding device arrays were integrated onto a glass substrate. Our proposed strategy sheds light on preparing various freestanding single-crystalline oxide devices and paves the way for their heterogeneous integration onto arbitrary substates. |
| title | A strategy for fabricating micro-scale freestanding single-crystalline complex oxide device arrays |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2408.10071 |