Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO$_3$
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| Format: | Preprint |
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2024
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| author | Ngabonziza, Prosper Tchiomo, Arnaud P. Nono |
| author_facet | Ngabonziza, Prosper Tchiomo, Arnaud P. Nono |
| contents | This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO$_3$. It presents current efforts in the synthesis science of epitaxial La:BaSnO$_3$ films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route towards engineering defect-free epitaxial La:BaSnO$_3$ heterostructures. By combining chemical surface characterization and electronic transport studies, a special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO$_3$ films and heterostructures. For application purposes, interesting optical properties of La:BaSnO$_3$ films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO$_3$-based thin-film field-effect transistors is presented together with recent progress in the the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO$_3$-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO$_3$ films in optoelectronic and transparent electronics are also discussed. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2408_10146 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO$_3$ Ngabonziza, Prosper Tchiomo, Arnaud P. Nono Materials Science This paper reviews recent developments in materials science and device physics of high-quality epitaxial films of the transparent perovskite La-doped barium stannate, La:BaSnO$_3$. It presents current efforts in the synthesis science of epitaxial La:BaSnO$_3$ films for achieving reduced defect densities and high electron mobility at room temperature. We discuss the scattering mechanisms and the route towards engineering defect-free epitaxial La:BaSnO$_3$ heterostructures. By combining chemical surface characterization and electronic transport studies, a special emphasis is laid on the proper correlation between the transport properties and the electronic band structure of La:BaSnO$_3$ films and heterostructures. For application purposes, interesting optical properties of La:BaSnO$_3$ films are discussed. Finally, for their potential application in oxide electronics, an overview of current progress in the fabrication of La:BaSnO$_3$-based thin-film field-effect transistors is presented together with recent progress in the the fundamental realization of two-dimensional electron gases with high electron mobility in La:BaSnO$_3$-based heterostructures. Future experimental studies to reveal the potential deployment of La:BaSnO$_3$ films in optoelectronic and transparent electronics are also discussed. |
| title | Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO$_3$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2408.10146 |