Intervalley mixing of interface excitons at lateral heterojunctions
Fuente:
arXiv
Salvato in:
| Autori principali: | , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866929464041013248 |
|---|---|
| author | Durnev, M. V. Smirnov, D. S. |
| author_facet | Durnev, M. V. Smirnov, D. S. |
| contents | $\require{mediawiki-texvc}$ We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of $\mathbf{K}_+$ and $\mathbf{K}_-$ valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of $0.2$ eV$\cdotÅ$ for typical heteropairs. We show that the valley mixing gives rise to the in-plane $g$-factor of localized electrons leading to the spin precession in the in-plane magnetic field. We further study the effects of the valley mixing on the fine structure and dynamics of excitons at type-II lateral heterojunctions. We find that the interplay of the valley mixing and long-range exchange interaction leads to the linear polarization of exciton photoluminescence along the armchair heterojunction with the degree of polarization up to $1/3$ under unpolarized excitation. Application of the in-plane magnetic field of the order of 10$-$100 mT in any direction leads to the depolarization of the photoluminescence. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_10170 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Intervalley mixing of interface excitons at lateral heterojunctions Durnev, M. V. Smirnov, D. S. Mesoscale and Nanoscale Physics Materials Science $\require{mediawiki-texvc}$ We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of $\mathbf{K}_+$ and $\mathbf{K}_-$ valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of $0.2$ eV$\cdotÅ$ for typical heteropairs. We show that the valley mixing gives rise to the in-plane $g$-factor of localized electrons leading to the spin precession in the in-plane magnetic field. We further study the effects of the valley mixing on the fine structure and dynamics of excitons at type-II lateral heterojunctions. We find that the interplay of the valley mixing and long-range exchange interaction leads to the linear polarization of exciton photoluminescence along the armchair heterojunction with the degree of polarization up to $1/3$ under unpolarized excitation. Application of the in-plane magnetic field of the order of 10$-$100 mT in any direction leads to the depolarization of the photoluminescence. |
| title | Intervalley mixing of interface excitons at lateral heterojunctions |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2408.10170 |