Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures

Fuente: arXiv
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Autores principales: Abbasi, Haris Naeem, Qi, Xin, Ju, Zheng, Ma, Zhenqiang, Zhang, Yong-Hang
Formato: Preprint
Publicado: 2024
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author Abbasi, Haris Naeem
Qi, Xin
Ju, Zheng
Ma, Zhenqiang
Zhang, Yong-Hang
author_facet Abbasi, Haris Naeem
Qi, Xin
Ju, Zheng
Ma, Zhenqiang
Zhang, Yong-Hang
contents This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.
format Preprint
id arxiv_https___arxiv_org_abs_2408_10696
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures
Abbasi, Haris Naeem
Qi, Xin
Ju, Zheng
Ma, Zhenqiang
Zhang, Yong-Hang
Materials Science
Applied Physics
This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.
title Impact of ALD-Deposited Ultrathin Nitride Layers on Carrier Lifetimes and Photoluminescence Efficiency in CdTe/MgCdTe Double Heterostructures
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2408.10696