Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866914101375008768 |
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| author | Khan, Saleh Ahmed Saha, Sudipto Singisetti, Uttam Bhuiyan, A F M Anhar Uddin |
| author_facet | Khan, Saleh Ahmed Saha, Sudipto Singisetti, Uttam Bhuiyan, A F M Anhar Uddin |
| contents | A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher gamma radiation doses of 3 and 5 Mrad, partial recovery of the device performance occurred, attributed to a radiation annealing effect. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $β$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $β$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $β$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2408_11028 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation Khan, Saleh Ahmed Saha, Sudipto Singisetti, Uttam Bhuiyan, A F M Anhar Uddin Applied Physics A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cumulative doses reaching up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad resulted in a significant decrease in on-current and an increase in on-resistance compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher gamma radiation doses of 3 and 5 Mrad, partial recovery of the device performance occurred, attributed to a radiation annealing effect. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $β$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $β$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $β$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments. |
| title | Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2408.11028 |