Nonlinear scintillation effects in the intrinsic luminescence from Sc$_{1.318}$Y$_{0.655}$Si$_{1.013}$O$_{4.987}$ crystal excited by electrons and gamma-quanta

Fuente: arXiv
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Autores principales: Belov, M. V., Kozlov, V. A., Pestovskii, N. V., Savinov, S. Yu., Tskhay, V. S., Vlasov, V. I., Zagumennyi, A. I., Zavartsev, Yu. D., Zavertyaev, M. V.
Formato: Preprint
Publicado: 2024
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author Belov, M. V.
Kozlov, V. A.
Pestovskii, N. V.
Savinov, S. Yu.
Tskhay, V. S.
Vlasov, V. I.
Zagumennyi, A. I.
Zavartsev, Yu. D.
Zavertyaev, M. V.
author_facet Belov, M. V.
Kozlov, V. A.
Pestovskii, N. V.
Savinov, S. Yu.
Tskhay, V. S.
Vlasov, V. I.
Zagumennyi, A. I.
Zavartsev, Yu. D.
Zavertyaev, M. V.
contents The spectral and kinetic properties of intrinsic luminescence from (Y$_2$Sc$_1$)$_{0.(3)}$(Sc)[Si]O$_5$ crystal are studied. The emission is excited by electrons and gamma-quanta. The composition (Y$_2$Sc$_1$)$_{0.(3)}$(Sc)[Si]O$_5$ is the congruent one for Sc$_2$SiO$_5$-Y$_2$SiO$_5$ solid solutions. It is found, that the crystal emits fairly bright intrinsic cathodololuminescence (CL) and radioluminescence (RL) at room temperature. In particular, the light yield of scintillation excited by -quanta with the energies of 661.7 keV is of 12000 photons/MeV. An increase in the beam flux by $\sim$20 times leads to the shift in the maximum CL energy spectral density from 315 to 340 nm and to the decrease in the CL decay time at 415 nm from 1377 +/- 3 ns to 1165 +/- 1 ns. Simultaneously, the decay time of RL excited by a photoelectron with the energy of 644.7 keV is of 1310 +/- 10 ns while a Compton electron with the energy of 477 keV excites RL with the decay time of 1050 +/- 10 ns. Also, we observed differences in the CL yield dependencies on the volume-averaged density of electronic excitations (EEs) at different wavelengths. An explanation of the results is given considering the nonlinear scintillation phenomena induced by an interaction between EEs. It is based on a conception that an increase in EE volume density leads to an increase in EEs nonradiative quenching due to these interactions.
format Preprint
id arxiv_https___arxiv_org_abs_2408_11070
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Nonlinear scintillation effects in the intrinsic luminescence from Sc$_{1.318}$Y$_{0.655}$Si$_{1.013}$O$_{4.987}$ crystal excited by electrons and gamma-quanta
Belov, M. V.
Kozlov, V. A.
Pestovskii, N. V.
Savinov, S. Yu.
Tskhay, V. S.
Vlasov, V. I.
Zagumennyi, A. I.
Zavartsev, Yu. D.
Zavertyaev, M. V.
Instrumentation and Detectors
Materials Science
High Energy Physics - Experiment
Optics
The spectral and kinetic properties of intrinsic luminescence from (Y$_2$Sc$_1$)$_{0.(3)}$(Sc)[Si]O$_5$ crystal are studied. The emission is excited by electrons and gamma-quanta. The composition (Y$_2$Sc$_1$)$_{0.(3)}$(Sc)[Si]O$_5$ is the congruent one for Sc$_2$SiO$_5$-Y$_2$SiO$_5$ solid solutions. It is found, that the crystal emits fairly bright intrinsic cathodololuminescence (CL) and radioluminescence (RL) at room temperature. In particular, the light yield of scintillation excited by -quanta with the energies of 661.7 keV is of 12000 photons/MeV. An increase in the beam flux by $\sim$20 times leads to the shift in the maximum CL energy spectral density from 315 to 340 nm and to the decrease in the CL decay time at 415 nm from 1377 +/- 3 ns to 1165 +/- 1 ns. Simultaneously, the decay time of RL excited by a photoelectron with the energy of 644.7 keV is of 1310 +/- 10 ns while a Compton electron with the energy of 477 keV excites RL with the decay time of 1050 +/- 10 ns. Also, we observed differences in the CL yield dependencies on the volume-averaged density of electronic excitations (EEs) at different wavelengths. An explanation of the results is given considering the nonlinear scintillation phenomena induced by an interaction between EEs. It is based on a conception that an increase in EE volume density leads to an increase in EEs nonradiative quenching due to these interactions.
title Nonlinear scintillation effects in the intrinsic luminescence from Sc$_{1.318}$Y$_{0.655}$Si$_{1.013}$O$_{4.987}$ crystal excited by electrons and gamma-quanta
topic Instrumentation and Detectors
Materials Science
High Energy Physics - Experiment
Optics
url https://arxiv.org/abs/2408.11070