Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al$_2$O$_3$ on $β$-Ga$_2$O$_3$

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Roy, Saurav, Bhattacharyya, Arkka, Peterson, Carl, Krishnamoorthy, Sriram
Format:	Preprint
Published:	2024
Subjects:	Materials Science Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2408.11342